发明名称 |
Semiconductor device and method of forming double-sided through vias in saw streets |
摘要 |
A semiconductor device is made by creating a gap between semiconductor die on a wafer. An insulating material is deposited in the gap. A first portion of the insulating material is removed from a first side of the semiconductor wafer to form a first notch. The first notch is less than a thickness of the semiconductor die. A conductive material is deposited into the first notch to form a first portion of the conductive via within the gap. A second portion of the insulating material is removed from a second side of the semiconductor wafer to form a second notch. The second notch extends through the insulating material to the first notch. A conductive material is deposited into the second notch to form a second portion of the conductive via within the gap. The semiconductor wafer is singulated through the gap to separate the semiconductor die.
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申请公布号 |
US7666711(B2) |
申请公布日期 |
2010.02.23 |
申请号 |
US20080127357 |
申请日期 |
2008.05.27 |
申请人 |
STATS CHIPPAC, LTD. |
发明人 |
PAGAILA REZA A.;DO BYUNG TAI |
分类号 |
H01L23/52;H01L21/304 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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