STRAINED NMOS TRANSISTOR FEATURING DEEP CARBON DOPED REGIONS AND RAISED DONOR DOPED SOURCE AND DRAIN,申请号KR20077013537-传众专利搜索

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发明名称	STRAINED NMOS TRANSISTOR FEATURING DEEP CARBON DOPED REGIONS AND RAISED DONOR DOPED SOURCE AND DRAIN
摘要
申请公布号	KR100943554(B1)	申请公布日期	2010.02.22
申请号	KR20077013537	申请日期	2005.12.15
申请人		发明人
分类号	H01L21/336;H01L21/265	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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