| 摘要 |
PURPOSE: A method for anodizing semiconductor parts using plasma is provided to shorten processing time by varying a duty ratio with pulse-like waves instead of an AC power source. CONSTITUTION: A plasma pretreating process is operated(S100). The plasma pretreating process is classified into an anode cleaning process, plasma cleaning process, plasma etching process, washing and cathode electrolytic cleaning process, and water rinsing process. The pretreating process comprises a process of degreasing the surface of a metallic material used as anode to eliminate remaining oil meal from materials. An anodizing process forming oxide film is performed using negative pulse(S200). The post-process is performed through dyeing and washing in water, and drying(S300).
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