| 摘要 |
Disclosed is an ultra-thin (-50nm) silicon nitride (SiN x) dielectric demonstrating low leakage current density (e.g. 0.1 nm/cm2 ) and high breakdown voltage (e.g. 5.6 MV/cm), highly suitable as a gate dielectric in a broad variety of thin film transistor technologies. The gate dielectric thickness can be scaled to even thinner values without compromising on gate leakage.
|
