发明名称 PATTERNING METHOD, ORGANIC ELECTRIC ELEMENT, ORGANIC ELECTROLUMINESCENCE ELEMENT, AND ORGANIC SEMICONDUCTOR TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a patterning method for suppressing residues at a pattern formation process from remaining in a formed recessed part or a hole in the formation of a pattern on a pattern formed layer. SOLUTION: The organic semiconductor transistor element 40 includes an insulating layer 47 formed by uniformly coating an insulating material for forming a barrier wall 49 on a substrate 42 with a source electrode 44 and a drain electrode 45 formed thereon as shown in Fig.8 in a manufacturing process. A mold 60 which has a projection 60A corresponding to a pattern to be formed and is coated with a solution 62 for dissolving the insulating layer on the projection part 60A is brought into contact with the insulating layer 47. Thereby, the insulating layer 47 is dissolved and the hole part 49A corresponding to the projection part 60A is formed, and then the mold 60 is separated from the substrate 42 to pattern the hole 49A. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010040392(A) 申请公布日期 2010.02.18
申请号 JP20080203393 申请日期 2008.08.06
申请人 FUJI XEROX CO LTD 发明人 NISHINO YOHEI;SATO KATSUHIRO;MASHITA KIYOKAZU;YONEYAMA HIROTO;OKUDA DAISUKE;MATSUMURA TAKASHI
分类号 H05B33/10;H01L21/336;H01L29/786;H01L51/05;H01L51/40;H01L51/50 主分类号 H05B33/10
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