| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance reliability of wiring of a semiconductor. Ž<P>SOLUTION: In a semiconductor device 70, a first opening is formed on an interlayer insulation film 4 on a cap film 3, and a wiring layer 6 composed of a barrier metal film 5 and Cu (copper) is embedded in the first opening. A third opening is formed on a cap film 7 and an interlayer insulation film 8 on the interlayer insulation film 4 and the wiring film 6, and a second opening is formed on an interlayer insulation film 9 on the interlayer insulation film 8 to contact the third opening 3. The second and third openings form a T-shaped opening. The barrier metal film 10 and a wiring layer 11 formed of Cu (copper) are embedded in the T-shaped opening. In the wiring layer 6, atomic vacancy in a film is discharged by a high-stain film 26 having strain higher than that of Cu (copper) and heat treatment. In the wiring layer 11, atomic vacancy in a film is discharged by a high-stain film 36 having strain higher than that of Cu (copper) and heat treatment. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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