发明名称 SUBSTRATE PROCESSING APPARATUS, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus for cooling the inside of a processing chamber in a short time, and to provide a method of manufacturing a semiconductor device. Ž<P>SOLUTION: The substrate processing apparatus 10 includes the processing chamber 12 for processing the wafer 1, a heater 39 arranged on the outer perimeter side of the processing chamber 12, an inner wall 34 arranged on the outer perimeter side of the heater 39. an outer wall 35 arranged with a space 36 from the inner wall 34, a cooling jacket which is cooled and arranged at the space 36, a movement mechanism 64 by which the cooling jacket is moved between a contact place where it is contacted with one of the inner wall 34 and the outer wall 35, and non-contact place where it is not contacted with the inner wall 34 nor with the outer wall 35, and a controller for controlling the movement mechanism 64. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010040952(A) 申请公布日期 2010.02.18
申请号 JP20080204968 申请日期 2008.08.08
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 SHIMADA SHINICHI
分类号 H01L21/205;C23C14/50;C23C16/46;H01L21/22 主分类号 H01L21/205
代理机构 代理人
主权项
地址