| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high output and long lifetime nitride semiconductor laser element having a high COD resistance, making it possible to suppress releasing of the end face protection film at its resonator end face during being driven for a long time at a high output. Ž<P>SOLUTION: A semiconductor laser emits laser light from the end face of an active layer 5 thereof, and includes a protection film 20 disposed on the end face and made of a single layer or a plurality of layers of a dielectric film. Wherein, distribution of hydrogen concentration in the protection film 20 is substantially flat, the active layer 5 is made of a group III nitride semiconductor having Ga as a constituent element, the protection film 20 is made of at least a first protection film 21 directly contacting with the end face of the active layer 5 and a second protective layer 22 contacting with the first protection layer 21, and the ratio of the hydrogen concentration of the first protection film 21 with respect to that of the second protection film 22 is 0.5 to 2.0. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
