| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser element that efficiently exhausts heat from a light emission region. Ž<P>SOLUTION: The semiconductor laser element 10 has a structure such that a semiconductor layer 12 including the light emission region E is formed only in a center region S1 on a top surface of a substrate 11. Namely, the semiconductor layer 12 is formed only in the light emission region E and a region near it. An insulating film 13 is formed covering at least part of a top surface of the semiconductor layer 12 and a region S2 on the top surface of the substrate 11, and a p-side electrode 14 is provided covering upper parts of the insulating film 13 and semiconductor layer 12. A recessed portion 11a is formed on the reverse surface side of the substrate 11, and an n-side electrode 15 and a buried layer 16 are buried in the recessed portion 11a. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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