发明名称 PRECISION MASK FOR FILM DEPOSITION, METHOD FOR DEPOSITING FILM, METHOD FOR FORMING FINE WIRING AND METHOD FOR PRODUCING ELECTRO-OPTICAL APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a precision mask for film deposition, even if, when being immersed into a liquid body and dried, in which adjoining beams are not adhered each other and the shape of the opening parts among the beams is maintained. Ž<P>SOLUTION: The precision mask for film deposition composed of single crystal silicon comprises first beams 2 parallelly arranged at prescribed intervals and forming a plurality of opening parts 3 long to one direction and at least a streak of second beam 4 arranged so as to be crossed with the first beams 2, and, provided that the length of the opening parts 3 divided by the second beam(s) 4 is defined as opening length L, the second beam(s) is arranged in such a manner that the opening length L of the opening part 3 whose opening length L is longest among a plurality of the opening parts 3 is controlled to a prescribed value or below, and, the second beam(s) 4 is arranged in such a manner that, when the precision mask 1 for precision is immersed into a liquid body and is dried, the adjoining first beams 2 are not adhered each other. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010037586(A) 申请公布日期 2010.02.18
申请号 JP20080200456 申请日期 2008.08.04
申请人 SEIKO EPSON CORP 发明人 SHINTO SUSUMU;YOTSUYA SHINICHI
分类号 C23C14/04;H01L51/50;H05B33/10;H05B33/26 主分类号 C23C14/04
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