| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has a protection element and is enhanced in use efficiency of an epitaxial layer surface. <P>SOLUTION: A PN diode 22 is connected between a source electrode 30 and a drain electrode 29 of a GaN-HFET 21. Thus, an overcurrent due to a surge voltage applied between the source electrode 30 and drain electrode 29 is discharged to a substrate side and then the GaN-HFET 21 is never broken even when applied with a surge voltage of approximately 1 kV. Further, the semiconductor device has a longitudinal structure having the GaN-HFET 21 stacked on the PN diode 22, so an anode electrode 34 and a cathode electrode 33 of the PN diode 22 need not to be formed on a surface of an epitaxial layer comprising a buffer layer 26, a GaN layer 27 and an AlGaN layer 28, and the use efficiency of the surface of the epitaxial layer is enhanced. Further, there is not etching damage caused by etching of the epitaxial layer and the GaN-HFET 21 has no variation in characteristics. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
