发明名称 SUBSTRATE TREATING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate treating apparatus capable of supplying a liquid material while preventing the risks of prolonging a stop state and contaminating the pipes. Ž<P>SOLUTION: In the substrate treating apparatus including a tank 81 for supplying a liquid material 80 and a vaporizer 83 for vaporizing the liquid material 80 to supply a vaporized gas of the liquid material 80 emitted by the vaporizer 83 into a treatment chamber, thereby forming a film on a wafer, the tank 81 is connected with a supplying container 91 for supplying the liquid material 80 and with an exhaust pipe 93 for reducing pressure in the tank 81, and the pressure in the supplying container 91 is made higher than that in the tank 81 so that the liquid material 80 is fed from the supplying container 91 into the tank 81. A cleaning fluid container 96 containing a cleaning fluid 95 is connected to the supplying container 91. Exchange work can be done only for the supplying container 91 and accordingly, the supply of the liquid material can be done while preventing the risks of prolonging the stop state and contaminating the pipes. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010040845(A) 申请公布日期 2010.02.18
申请号 JP20080203164 申请日期 2008.08.06
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 ONO KENJI
分类号 H01L21/31;C23C16/448;H01L21/283;H01L21/285;H01L21/768;H01L23/522 主分类号 H01L21/31
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