| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of achieving improvement in sensitivity to light of a long wavelength such as infrared light and red light, and the improvement in S/N ratio. <P>SOLUTION: The solid-state imaging device includes: a semiconductor substrate 22; a plurality of pixels 23 arranged on the semiconductor substrate 22 with photoelectric converters 24, respectively; and a separator 25 electrically isolating each of a plurality of pixels 23. A first pixel 31 has a first color filter 41 having the peak value of an optical permeability in a first wavelength region, and a first photoelectric converter 32. A second pixel 34 adjoining to the first pixel 31 has: a second color filter 42 having the peak value of the optical permeability in the first wavelength region, and in the second wavelength region at the shorter wavelength side than the first wavelength region; and a second photoelectric converter 35. A part 33 of the depth of the first photoelectric converter 32 extends to the lower part of the second photoelectric converter 35 beyond the separator 25. <P>COPYRIGHT: (C)2010,JPO&INPIT |
