| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for producing single crystal silicon by which the productivity in production and the material yield in processing of products can be improved by growing a single crystal silicon in such a manner that the cross section of the single crystal silicon becomes a polygonal shape. Ž<P>SOLUTION: The apparatus 1 for producing the single crystal silicon T is provided with: a seed rotation control means; a crucible rotation control means; and a seed pulling rate control means for controlling the pulling rate of a seed S within a range of 0.4-2.0 mm/min. Wherein, a seed S, prepared so that the arrangement of the crystal lattice of the contact surface S1 with a silicon melt M becomes (100) direction, is used. Thereby, a single crystal silicon T having a cross section with approximately a tetragon is grown. Similarly, when the arrangement of the crystal lattice is made (111) or (110), the shape of the cross section of the obtained single crystal silicon T is made triangle or hexagonal. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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