发明名称 |
Carbon-Doped Epitaxial SiGe |
摘要 |
A method for forming carbon-doped epitaxial SiGe of a PMOS transistor by providing a semiconductor substrate having a PMOS transistor gate stack and recess etched active regions. The method includes forming carbon-doped epitaxial SiGe within the recess etched active regions. A PMOS transistor includes a semiconductor substrate, a PMOS transistor gate stack, and source/drain extensions. The PMOS transistor also includes carbon-doped epitaxial SiGe source/drain regions.
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申请公布号 |
US2010038727(A1) |
申请公布日期 |
2010.02.18 |
申请号 |
US20090582841 |
申请日期 |
2009.10.21 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
CHAKRAVARTHI SRINIVASAN;CHIDAMBARAM PERIANNAN;WEIJTMANS JOHAN |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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