| 摘要 |
PURPOSE: A method for forming a device isolation layer of semiconductor device is provided to form a device isolation layer without a divot in the semiconductor substrate by filling a space with a dummy oxide film and planarizing the dummy oxide film with chemical mechanical polishing process. CONSTITUTION: A semiconductor substrate on which a pad oxide film and a pad nitride film is deposited in order is prepared(S1). The pad nitride film, the pad oxide film and the semiconductor substrate are etched and a trench is formed in the device isolation region of the semiconductor substrate(S2). The gap-filling oxide film is deposited inside of the trench and on the top of the pad nitride film(S3). The gap-filling oxide film is planarized in order to expose the pad nitride film to the outside(S4). The pad nitride film is eliminated and the pad oxide film is exposed to the outside(S5). The dummy oxide film is deposited on the top of the pad oxide film to fill a space(S6). The dummy oxide film is planarized in order to expose the semiconductor substrate to the outside(S7).
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