| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a diffusion problem with a surface layer forming metal can be certainly solved, magnetically adverse effects on a semiconductor element, and further are eliminated by realizing a non-magnetic external electrode, deterioration of electrical conductivity is not caused even when the frequency of a transmit signal increases. SOLUTION: An Ni-P layer 11 is inserted between a Cu layer 12 making up an external electrode 3 and a surface layer (Au layer) 10. Ni-P making up such a Ni-P layer 11 shows excellent adhesion for both Cu and Au, and can effectively prevent Au from being diffused. In addition, since the Ni-P is non-magnetic, and further, no magnetic metals are purged from an external electrode 3, the entire external electrode 3 can be made completely non-magnetic. Since this can certainly prevent a magnetic impact from a magnetic metal layer from reaching the semiconductor element 2, a malfunction of the semiconductor element 2 is prevented, thus contributing to the enhancement of semiconductor device's reliability. COPYRIGHT: (C)2010,JPO&INPIT |
