摘要 |
Non- volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode. The metal oxide switches using bulk-mediated switching, has a bandgap greater than 4 electron volts (eV), has a set voltage for a set operation of at least one volt per one hundred angstroms of a thickness of the metal oxide, and has a leakage current density less than 40 amps per square centimeter (A/cm2) measured at 0.5 volts (V) per twenty angstroms of the thickness of the metal oxide. |
申请人 |
INTEMOLECULAR, INC,;PHATAK, PRASHANT;CHIANG, TONY;KUMAR, PRAGATI;MILLER, MICHAEL |
发明人 |
PHATAK, PRASHANT;CHIANG, TONY;KUMAR, PRAGATI;MILLER, MICHAEL |