| 摘要 |
PURPOSE: A chemically amplified positive resist composition is provided to form excellent resist pattern with good effective sensitivity and exposure latitude, and to be suitable for ArF excimer laser lithography, KrF excimer laser lithography and ArF immersion lithography. CONSTITUTION: A chemically amplified positive resist composition comprises: a resin comprising a structural unit represented by the formula (I), wherein R1 represents a hydrogen atom, a halogen atom, a C1-C4 alkyl group or a C1-C4 perfluoroalkyl group, Z represents a single bond or -(CH2)k-CO-X4-, k represents an integer of 1 to 4, X1, X2, X3 and X4 each independently represents an oxygen atom or a sulfur atom, m represents an integer of 1 to 3 and n represents an integer of 0 to 3, and an acid generator. |
