| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of reducing a residual quantity of Mn in a Cu wire while preventing the occurrence of film separation of a metal film on a side face of a groove. SOLUTION: A second insulation layer 6 containing Si and O is formed on a first wire 5, and thereafter a second groove 11 and a via hole 12 are formed in the second insulation layer 6. Next, the inner surface of the groove and that of the via hole are coated with a metal film 18 formed of MnO by a sputtering method. Then, MnO in the metal film 18 enters in the inner surface of the second groove 11 and a side surface of the via hole 12 by energy of sputtering, and a second barrier film 13 formed of MnSiO is formed. A part formed on a bottom face of the via hole 12 in the metal film 18 is removed, thereafter a via 15 is embedded in the via hole 12, and a wire 14 is embedded in the second groove 11. COPYRIGHT: (C)2010,JPO&INPIT |
