| 摘要 |
<P>PROBLEM TO BE SOLVED: To produce a group III nitride compound semiconductor having the major face forming a minute off-angle with the m-plane. Ž<P>SOLUTION: A concavo-convex pattern is formed on a sapphire substrate 10 and only the faces 10c-1 having the same normal vector direction in the c-plane or side faces making an angle of not more than 20 degrees with the c-plane are exposed while other faces are covered with an epitaxially grown mask 20 comprising SiO<SB>2</SB>(3.A). The method is carried out at normal pressure while maintaining a high V/III ratio in a period from when a GaN layer 30 starts to grow (3.B) until the layer buries grooves (3.C). In the period from when the grooves are buried until the top face of the convex portion is covered and flattened (3.D), the process is carried out under reduced pressure while controlling the V/III ratio to be low (by reducing the supplying amount of ammonia to 1/5). After the convex portion is mostly covered and flattened (3.E), the process is carried out at normal pressure while controlling the V/III ratio to be high (by resuming the original supply amount of ammonia). Thus, a GaN film having the major face as a flat surface forming the minute off-angle with the m-plane can be formed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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