| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which can make an excellent silicic semiconductor on a uniform film of a larger area at high speed, and can make a thin film of a high function and high quality without defects on the deposited film. <P>SOLUTION: The plasma processing apparatus applies a VHF high-frequency power to a high-frequency electrode 3 to produce a plasma. An impedance matching device, in which a capacitance element 5 and an inductance element 6 are connected in series, is located between the electrode surface other than the surface adjacent to a reaction space 12 of the high-frequency electrode 3 and the conductor of a ground potential to be symmetrically about the center of the high-frequency electrode 3. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
