A THIN FILM TRANSISTOR SUBSTRATE AND A FABRICATING METHOD OF THE SAME

摘要

PURPOSE: A thin film transistor substrate and a fabricating method of the same are provided to apply a etch stopper to an insulating substrate in oxide semiconductor thin film transistor producing, thereby improving reliability of the oxide semiconductor thin film transistor. CONSTITUTION: An oxide semiconductor active layer pattern(141) is formed around a gate electrode(112). A passivation layer is formed on a data line and the oxide semiconductor active layer pattern. The passivation layer includes the first opening unit(162) for exposure of a drain electrode connecting unit(132) and the second opening unit(163) for exposure of the oxide semiconductor active layer pattern. A drain electrode(151) electrically connects the oxide semiconductor active layer pattern and the drain electrode connecting unit through the first opening unit and the second opening unit.