发明名称 METHOD FOR PATTERN FORMATION AND RESIN COMPOSITION FOR USE IN THE METHOD
摘要 This invention provides a method for pattern formation, comprising (1) the step of selectively exposing a first resist layer and then developing the exposed first resist layer to form a first pattern, (2) the step of coating a predetermined resin composition containing a resin containing hydroxyl groups, which, upon baking, can render the resin insoluble or sparingly soluble in a developing solution and a solvent, on a first pattern, baking the coating, and washing the baked coating to form a second pattern, and (3) the step of subjecting the second pattern to whole image exposure or selective exposure to render the second pattern partially soluble in a developing solution, then developing the pattern to form a third pattern comprising at least one of holes and grooves formed in the second pattern.
申请公布号 KR20100017727(A) 申请公布日期 2010.02.16
申请号 KR20097025687 申请日期 2008.05.21
申请人 JSR CORPORATION 发明人 NAKAMURA ATSUSHI;SHIMOKAWA TSUTOMU;TAKAHASHI JUNICHI;ABE TAKAYOSHI;NAGAI TOMOKI;KAKIZAWA TOMOHIRO
分类号 G03F7/039;G03F7/40 主分类号 G03F7/039
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