发明名称 |
Wiring material and a semiconductor device having a wiring using the material, and the manufacturing method thereof |
摘要 |
An object of the present invention is to realize a semiconductor device having a high TFT characteristic. In manufacturing an active matrix display device, electric resistivity of the electrode material is kept low by preventing penetration of oxygen ion into the electrode in doping of an impurity ion. A display device having a low electric resistivity can be obtained.
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申请公布号 |
US7663238(B2) |
申请公布日期 |
2010.02.16 |
申请号 |
US20080186709 |
申请日期 |
2008.08.06 |
申请人 |
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发明人 |
YAMAZAKI SHUNPEI;TAKAYAMA TORU |
分类号 |
H01L23/532;G02F1/1362;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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