发明名称 |
FIN-FET device structure formed employing bulk semiconductor substrate |
摘要 |
A fin-FET device and a method for fabrication thereof both employ a bulk semiconductor substrate. A fin and an adjoining trough are formed within the bulk semiconductor substrate. The trough is partially backfilled with a deposited dielectric layer to form an exposed fin region and an unexposed fin region. A gate dielectric layer is formed upon the exposed fin region and a gate electrode is formed upon the gate dielectric layer. By employing a bulk semiconductor substrate the fin-FET device is fabricated cost effectively.
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申请公布号 |
US7663185(B2) |
申请公布日期 |
2010.02.16 |
申请号 |
US20060441724 |
申请日期 |
2006.05.27 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO, LTD |
发明人 |
CHEN KUANG-HSIN;TSAO HSUN-CHIH;LU JHI-CHERNG;HOU CHUAN-PING;HSU PENG-FU;CHEN HUNG-WEI;LEE DI-HONG |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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