| 摘要 |
The invention relates to a nitride semi-conductor component having a group III nitride layer structure, which is deposited on a substrate having a group IV substrate surface of a group IV substrate material with a cuboid crystal structure. The group IV substrate surface, without consideration of a surface reconstruction, comprises an elementary cell having C2 symmetry, however not with higher rotational symmetry than C2 symmetry. Directly adjacent to the group IV substrate surface, the group III nitride layer structure has a germination layer made of ternary or quaternary AlInGaN, with 0 <= x,y <1 and x+y <= 1. In this way, high-quality, single-crystal growth is achieved. The advantage is a high crystal quality that can be achieved, the growth of c-, a-and m-plane GaN and above all the easy possibility of removing the silicon substrate entirely or partially since this is easier to do by wet chemical processes on (111) oriented substrates.
|
