VERFAHREN ZUR VERBESSERUNG DER INVERSIONSSCHICHT- BEWEGLICHKEIT EINER METAL-OXYD-HALBLEITER FELDEFFEKTTRANSISTOR AUS SILIZIUMCARBID,申请号AT20020735872T-传众专利搜索

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发明名称	VERFAHREN ZUR VERBESSERUNG DER INVERSIONSSCHICHT- BEWEGLICHKEIT EINER METAL-OXYD-HALBLEITER FELDEFFEKTTRANSISTOR AUS SILIZIUMCARBID
摘要
申请公布号	AT457524(T)	申请公布日期	2010.02.15
申请号	AT20020735872T	申请日期	2002.06.14
申请人	NXP B.V.	发明人	EGLOFF, RICHARD;MUKHERJEE, SATYENDRANATH;ALOK, DEV;ARNOLD, EMIL
分类号	H01L21/28;H01L29/78;H01L21/04	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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