METHOD FOR FABRICATING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve the characteristic of a memory device by improving a ratio of the width to length of the pin active region. CONSTITUTION: A hard mask layer is formed on a substrate(200). A device isolation trench is comprised of a first trench(T1) and a second trench(T2). The first trench is formed by selectively etching a hard mask layer and a substrate. The first trench has a vertical sidewall. A second trench is formed by etching the substrate. A device isolation trench(230) is formed by burying an insulation layer in the device isolation trench. The protrusion is formed on the sidewall of the device isolation layer.