| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an epitaxial silicon wafer further reduced in warpage relative to a patent literature 2 by forming a cross-sectional shape of a silicon wafer for epitaxial growth into an appropriate one; and a method of manufacturing the same. <P>SOLUTION: In this epitaxial silicon wafer including a silicon wafer for epitaxial growth and an epitaxial layer, the epitaxial layer is formed on the silicon wafer for epitaxial growth having a cross-sectional shape satisfying a relationship of a predetermined expression. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
