| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a semiconductor layer from being distorted or cracked by a void in a trench even if high-temperature processing of 1,000°C or above is impossible. Ž<P>SOLUTION: First and second underlying oxide films 14 and 15 are formed on an active layer 12, and the underlying oxide films 14 and 15 are so patterned as to expose the active layer 12 (Fig.2(b)). A trench 16 is then formed in the active layer 12 by using the patterned underlying oxide films 14 and 15 as a mask (Fig.2(c)). A sidewall oxide film 17 is formed on the sidewall of the trench 16 (Fig.2(d)), and a first interlayer insulating film 18 is formed on the sidewall oxide film 17 to connect spaces on the inside and outside of the trench 16 (Fig.3(a)). A buried material 19 is formed on the first interlayer insulating film 18 (Fig.3(b)), and annealing is performed to fuse the buried material 19 and to fill space in the trench 16 with the buried material 19 (Fig.3(c)). Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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