| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming a fine pattern of a semiconductor element. <P>SOLUTION: The method includes a step of providing a semiconductor substrate having a photoresist pattern formed on an etching target film, a step of forming an auxiliary film on the semiconductor substrate having a photoresist pattern formed thereon, a step of forming a first auxiliary pattern formed by modifying the auxiliary pattern formed on the photoresist pattern, a step of forming a photoresist pattern on the semiconductor substrate having the first auxiliary pattern and the auxiliary film, a step of forming a second auxiliary pattern by modifying the auxiliary film formed under the photoresist film as the auxiliary film is left only between the photoresist patterns, and a step of removing the first and second auxiliary pattern to form an etching mask pattern containing the photoresist pattern and the auxiliary film. <P>COPYRIGHT: (C)2010,JPO&INPIT |
