SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

<P>PROBLEM TO BE SOLVED: To solve the problem that a photoresist is to be formed for each transistor of different threshold voltage in a conventional semiconductor device and a process is not efficient. Ž<P>SOLUTION: A semiconductor device is provided with a first area where a first transistor having a high threshold voltage is formed and a second area where a second transistor having a low threshold voltage is formed, and the interval L1 of the diffusion area of the adjacent transistor in the first area is wider than the interval L2 of the diffusion area of the adjacent transistor in the second area. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž