SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which prevents by-products from sticking to a low temperature portion such as a furnace throat without heating. Ž<P>SOLUTION: The substrate processing apparatus includes: a reactor which includes a base flange 16b for supporting an inlet flange 16a and processes a substrate; a seal cap 20 which locks out the reactor in air tightness; an isolation flange 42 which is a cover provided inside the base flange 16b being apart from the seal cap 20; a small chamber 43 which is formed by a space surrounded by inside wall surfaces of the seal cap 20 and the base flange 16b; a first gas supply pipe 19b which supplies first gas inactive to a seal cap 20 to a small chamber 43; an outflow path 42a which makes the first gas supplied to the small chamber 43 formed in the isolation flange 42 flow to the inside of the reactor; and a second gas supply pipe 19a which is provided at the lower downstream side than the outflow path 42a and supplies second gas more active to the seal cap 20 than the first gas to the inside of the reactor. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž