| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing silicon wafer capable of increasing the amount of holes poured by RTA (rapid thermal annealing) than that in the manufacturing method in the prior art. Ž<P>SOLUTION: The method of manufacturing wafer includes a heat treatment process for forming holes in the silicon wafer by effecting heat treatment of silicon wafer in a predetermined atmospheric gas while a treatment film, whose surface area per unit area is larger than that of the silicon wafer, is formed on the front surface of the silicon wafer or the front surface and backside of the silicon wafer which is processed through heat treatment without decreasing the thickness of the silicon wafer substantially. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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