SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of stabilizing film quality of a gate insulating film containing at least either of Hf and Zr; and to provide a method of manufacturing the same. SOLUTION: The semiconductor device includes: a semiconductor layer; the gate insulating film formed on the semiconductor layer and containing at least either of Hf and Zr; and a gate electrode formed on the gate insulating film and containing carbonitride containing at least either of Hf and Zr. COPYRIGHT: (C)2010,JPO&INPIT