| 摘要 |
The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the surface-emission type semiconductor laser according to the present invention, when supposing the optical path length (L) of a resonator part relative to a lasing wavelength lambda0 to be given as 0.9xlambda0<=L<=1.1xlambda0, and denoting the refractive indexes of a high refractive index layer and a low refractive index layer of a dielectric DBR by nH1 and nL1; the average refractive index within an optical path length lambda0/4 in the semiconductor in contact with the dielectric DBR by nS1; and the refractive indexes of the high refractive index layer and the low refractive index layer of a semiconductor DBR by nH2 and nL2, respective materials to be used are selected so as to satisfy the following conditions (1) and (2): nH1>f(nS1)nL12+g(nS1)nL1+h(nS1), (1) where f(nS1)=0.0266 nS12-0.2407 nS1+0.6347; g(nS1)=-0.0508 nS12+0.4335 nS1-0.0085; and h(nS1)=0.0382 nS12-0.3194 nS1+0.7398, and nH2-nL2>0.4. (2)
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