CHEMICAL VAPOR DEPOSITION METHOD AND SYSTEM FOR SEMICONDUCTOR DEVICES

摘要

A method of and system for chemical vapor deposition of layers of material on substrates for producing thin film semiconductor devices in a continuous in-line processing. The chemical vapor may include an organometallic material, such as diethyl zinc vapor, or dimethyl zinc vapor, as well as a material that provides oxygen. It may also include a dopant. The system includes a continuous in-line substrate conveyance apparatus for moving a plurality of substrates through a plurality of deposition regions, a deposition head for providing and distributing a chemical vapor at each of the regions to deposit material for the layers, and a chemical material supply apparatus for providing a flow of chemical materials to each of the heads for the chemical vapor. The chemical vapor deposition head comprises different plenums for receiving chemical materials.