IC RESISTOR FORMED WITH INTEGRAL HEATSINKING STRUCTURE

摘要

A resistor is formed on field oxide with a portion of the resistor body configured to overlap an active region in an integrated circuit (IC) substrate to provide heatsinking for the resistor body. In one embodiment, cooling fingers extend from the resistor body beyond the field oxide to overlap the active region. In another embodiment, minor areas of the resistor body overlap the active region. The resistor body may be formed of polycrystalline silicon (polysilicon), silicided polysilicon, or metal. An oxide having greater thermal conductance than the field oxide is formed between the overlapping parts of the resistor body and the active region.