发明名称 |
SELF-ALIGNED SOI SCHOTTKY BODY TIE EMPLOYING SIDEWALL SILICIDATION |
摘要 |
A self-aligned Silicon on Insulator (SOI) Schottky Body Tie structure includes: a source region comprising a silicide layer disposed on a top surface of the source region; a drain region comprising a silicide layer disposed on a top surface of the drain region; a gate region disposed above a channel formed by the drain and source regions; and a gate oxide layer disposed between the gate region and the channel formed by the drain and source regions, wherein when silicidation is performed on the diffusion region it forms a metal-silicon alloy contact such that the silicide layer extends into and directly touches the channel.
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申请公布号 |
US2010032759(A1) |
申请公布日期 |
2010.02.11 |
申请号 |
US20080189639 |
申请日期 |
2008.08.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG LELAND;LAUER ISAAC;SLEIGHT JEFFREY W. |
分类号 |
H01L21/336;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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