FIELD EFFECT TRANSISTOR

摘要

Disclosed is a field effect transistor equipped with a substrate; a drift layer formed on the substrate; an electron barrier layer formed in a higher layer than the drift layer; an electron transit layer formed on the electron barrier layer; a gate electrode formed on the electron transit layer; an electron conduction region that is on one side, in the gate length direction, of the gate electrode and that extends from the electron transit layer to a region that is more toward the substrate than the electrode barrier layer; a source electrode that is on the other side, in the gate length direction, of the gate electrode, and that is formed on the electron transit layer; and a drain electrode that is electrically connected to one end of the electron conduction layer on the substrate side through the drift layer.