| 摘要 |
A transparent conductive semiconductor substrate 70 comprising a light emitting layer section 24 is directly bonded on one of main surfaces on a main compound semiconductor layer 50 composed of Group III-V compound semiconductor, wherein an alkali metal atom concentration on a bonded boundary surface between the main compound semiconductor layer 50 and the transparent conductive semiconductor substrate 70 is adjusted to be equal to or greater than 1x1014 atoms/cm2 and equal to or less than 2x1015 atoms/cm2. Herewith, it provides a light emitting device capable of sufficiently decreasing boundary surface resistance between the light emitting layer section and the transparent conductive semiconductor substrate.
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