SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING SCHOTTKY BARRIER DIODE

摘要

Disclosed is a method for manufacturing a schottky barrier diode (11), comprising the following steps.  A GaN substrate (2) is first provided.  A GaN layer (3) is formed on the GaN substrate (2).  A schottky electrode (4) is formed that includes a first layer which is formed of Ni or a Ni alloy and formed in contact with the top of the GaN layer (3).  The step of forming the schottky electrode (4) comprises the step of forming a metal layer to serve as the schottky electrode (4) and the step of heat treating the metal layer.  The dislocation density of a region, in the GaN layer (3), which is in contact with the schottky electrode (4) is not more than 1 × 108 cm-2.