| 摘要 |
PURPOSE: A CMOS image sensor and a fabricating method thereof are provided to trap an electronics generated in the silicon defect by implanting an impurity with uniform concentration around the STI. CONSTITUTION: A substrate(110) has at least one trench(111) formed from the top side into inside. The substrate has an active area(112) formed between the trenches. The trench has an enough depth electrically independently of a device. The STI(120) is formed while filling the trench of the substrate. The impurity distribution layer(130) is formed into the inside of the substrate along with STI and is doped with uniform impurity concentration.
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