发明名称 |
Method of making non-volatile memory cell with embedded antifuse |
摘要 |
A method of making a nonvolatile memory device includes forming a first electrode, forming at least one nonvolatile memory cell comprising a first diode portion, a second diode portion and an antifuse separating the first diode portion from the second diode portion, and forming a second electrode over the at least one nonvolatile memory cell.
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申请公布号 |
US7660181(B2) |
申请公布日期 |
2010.02.09 |
申请号 |
US20070819595 |
申请日期 |
2007.06.28 |
申请人 |
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发明人 |
KUMAR TANMAY;HERNER S. BRAD |
分类号 |
G11C17/18;G11C7/00;G11C11/00;G11C11/36;G11C11/39;G11C17/06;G11C17/16;G11C29/00;H01L21/336;H01L21/82;H01L27/24;H01L29/73;H01L45/00 |
主分类号 |
G11C17/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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