发明名称 Method for destruction of metallic carbon nanotubes, method for production of aggregate of semiconducting carbon nanotubes, method for production of thin film of semiconducting carbon nanotubes, method for destruction of semiconducting carbon nanotubes, method for production of aggregate of metallic carbon nanotubes, method for production of thin film of metallic carbon nanotubes, method for production of electronic device, method for production of aggregate of carbon nanotubes, method for selective reaction of semiconducting carbon nanotubes
摘要 A method for destruction of metallic carbon nanotubes is provided. The method includes irradiating a mixture of semiconducting carbon nanotubes and metallic carbon nanotubes with energy beams (such as laser light), thereby selectively destroying metallic carbon nanotubes or semiconducting carbon nanotubes. The energy beams have energy components for resonance absorption by the metallic carbon nanotubes or semiconducting carbon nanotubes.
申请公布号 US7659139(B2) 申请公布日期 2010.02.09
申请号 US20060459782 申请日期 2006.07.25
申请人 SONY CORPORATION 发明人 HUANG HOUJIN
分类号 H01L51/40;H01L21/44 主分类号 H01L51/40
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