| 摘要 |
<p>PURPOSE: A method for manufacturing of an image sensor is provided to improve a defect on a first carrier substrate having a image sensing device thereon by processing the carrier substrate through an annealing process after a cleaving process. CONSTITUTION: A wiring and an interlayer dielectric layer are formed on a semiconductor substrate including a readout circuit. A three layer carriers are formed inside the insulating layer. The carrier substrate and interlayer dielectric layer are boned so that an image sensing device is connected to the readout circuit. A first carrier substrate is processed through a cleaving process and a first carrier pattern layer(250) is formed on the second carrier substrate(300). The first carrier pattern layer is processed through a thermal process.</p> |
