METHOD OF FORMING A TUNNEL DIELECTRIC LAYER IN A FLASH MEMORY DEVICE

摘要

PURPOSE: A method of forming a tunnel dielectric layer in a flash memory device is provided to improve The leakage current and breakdown voltage by preventing the penetration of boron. CONSTITUTION: The oxide film(12) is formed on the semiconductor substrate(10). The nitrogen containing insulating layer(12a) is formed by the plasma nitriding process of the high temperature in the surface of the oxide film. The nitrogen accumulating layer(12b) is formed at the semiconductor substrate and the interface of the oxide film in which the nitrogen containing insulating film is formed.