发明名称 SOLID-STATE IMAGING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To increase a charge amount which can be stored in a photodiode while making it possible to completely read charges stored in the photodiode. Ž<P>SOLUTION: The in-plane distribution F0 of the impurity concentration of an impurity diffused layer K0 is set so that the impurity concentration is the lowest at the center part and gradually becomes higher in the shape of a concentric circle from the center part of the impurity diffused layer K0 to the outer side. Thus, a potential distribution P0 within the horizontal plane of the photodiode 11 is flattened, and the potential is prevented from becoming deep at the center part of the impurity diffused layer K0. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010027750(A) 申请公布日期 2010.02.04
申请号 JP20080185525 申请日期 2008.07.17
申请人 TOSHIBA CORP 发明人 YAMAGUCHI TETSUYA;YAGAMI TAKANORI;YAMASHITA HIROSHI
分类号 H01L27/146;H04N5/335;H04N5/355;H04N5/357;H04N5/369;H04N5/374 主分类号 H01L27/146
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