| 摘要 |
<P>PROBLEM TO BE SOLVED: To produce a film having few defects with high productivity, by inhibiting occurrence of arcing and reducing cleaning frequency. Ž<P>SOLUTION: A magnetron sputtering apparatus has a correction magnetic circuit (32) provided in the inner part of an anode portion (30) or in the vicinity thereof, and forms a magnetic field in which a part of magnetic lines of force, which penetrate a target (18), detours around a deposition shield (27) and penetrates a part of the anode portion (30). The deposition shield (27) has the surface (27A) of a film-forming side, which forms an angle of 10 degrees or smaller against a direction (48) of a normal line at a point that is closer to the penetration position of the magnetic field that penetrates a part of the anode in the normal line direction than points of which the magnetic lines of force of the single correction magnetic circuit (32) become most closely parallel with the normal line of the surface of the anode portion (30). Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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